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W4TRD8R-0D00

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
W4TRD8R-0D00Diameter: 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride depositiondistributor----279 K
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