| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BGY916 | UHF amplifier module | Philips-Semiconductors | SOT365 | - | - | - | 88 K |
| IRFY9130 | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY9130CM | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 300 K |
| IRFY9140 | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY9140C | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| MZPY91RL | 1 watt hermetically sealed glass silicon zener diode | Motorola | - | 2 | -65°C | 200°C | 113 K |
| ZY91GP | 91 V, 5 mA, 2 W glass passivated zener diode | distributor | - | 2 | -65°C | 175°C | 65 K |
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