| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT7201LA80LB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | LCC | 32 | -55°C | 125°C | 152 K |
| IDT7202LA80LB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | LCC | 32 | -55°C | 125°C | 152 K |
| MC-4516CD641ES-A80L | 128M-byte(16M-word x 64-bit) SDRAM SO DIMM | NEC-Electronics-Inc- | - | - | - | - | 150 K |
| MC-458CB641ES-A80L | 64M-byte(8M-word x 64-bit) SDRAM SO DIMM | NEC-Electronics-Inc- | - | - | - | - | 137 K |
| PD45128163G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
| PD45128163G5-A80LI-9JF | 16M; 125MHz 64-bit synchronous dynamic RAM module | distributor | TSOP | 168 | 0°C | 70°C | 710 K |
| PD45128163G5-A80LT-9JF | 128M; 125MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
| PD45128441G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
| PD45128841G5-A80LT-9JF | 128M; 133MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
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