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b1050

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SB1050Silicon PNP epitaxial planar type small signal transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----37 K
MBRB1050Schottky RectifierGeneral-Semiconductor----71 K
SB1050Schottky barrier rectifier. Max recurrent peak reverse voltage 50.0 V. Max average forward rectified current at Tc = 90degC 10 A.distributor-2-50°C125°C38 K
SB1050Reverse voltage: 50.00V 10A schottky barrier rectifierdistributor-2-65°C150°C39 K
SB1050Reverse voltage: 50.00V 10A schottky barrier rectifierdistributor-2-65°C150°C39 K
SB1050CTSchottky barrier rectifier. Max recurrent peak reverse voltage 50.0 V. Max average forward rectified current at Tc = 90degC 10 A.distributor-3-50°C125°C39 K
SB1050CTReverse voltage: 50.00V; 10A schottky barrier rectifierdistributor-3-65°C150°C40 K
SB1050CTReverse voltage: 50.00V; 10A schottky barrier rectifierdistributor-3-65°C150°C40 K
SB1050DCDDPak surfase schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 100degC 10 A.distributor-3-50°C125°C46 K
SB1050FIsolation schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 90degC 10 A.distributor-2-50°C125°C44 K
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