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b15n

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MGB15N35CLT4Internally Clamped N-Channel IGBTON-SemiconductorD2PAK3--99 K
MGB15N40CLT4Internally Clamped N-Channel IGBTON-SemiconductorD2PAK3--100 K
MGB15N43CLT4Internally Clamped N-Channel IGBTON-SemiconductorD2PAK3--70 K
MHPM6B15N120SLHybrid power moduleMotorolaISSUE A17-40°C150°C265 K
MHPM6B15N120SSHybrid power moduleMotorolaISSUE A17-40°C150°C265 K
MTB15N06ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C231 K
MTB15N06VTMOS V power field effect transistorMotorolaDPAK4-55°C175°C274 K
STB15N25N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----87 K
STB15NK50ZN-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSGS-Thomson-Microelectronics----672 K
STB15NK50Z-1N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSGS-Thomson-Microelectronics----672 K
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