Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1ZB200 | Zener diode for constant voltage regulation and transient suppressors applications | Toshiba | - | 2 | -40°C | 150°C | 207 K |
CNB2001 | Reflective Photosensors | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 53 K |
FMB200 | PNP Multi-Chip General Purpose Amplifier | Fairchild-Semiconductor | SOIC | 6 | - | - | 50 K |
GB200A | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 140 K |
MX1011B200Y | Microwave power transistor | Philips-Semiconductors | SOT439 | - | - | - | 88 K |
MX1011B200Y | Microwave power transistor | Philips-Semiconductors | SOT439 | - | - | - | 88 K |
SB200-05H | Shottky barrier diode, 50V/20A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 78 K |
SB200-05R | Shottky barrier diode, 50V/20A rectifier | SANYO-Electric-Co--Ltd- | 1180 | 3 | - | - | 81 K |
SB200-09 | Shottky barrier diode, 90V/20A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 78 K |
SB200-09R | Shottky barrier diode, 90V/20A rectifier | SANYO-Electric-Co--Ltd- | 1180 | 3 | - | - | 80 K |
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