Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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B350 | 3 AMP surface mount schottky barrier rectifier | distributor | SMC | 2 | -65°C | 125°C | 665 K |
CB35000 | 0.5 MICRON HCMOS STANDARD CELLS | SGS-Thomson-Microelectronics | - | - | - | - | 166 K |
ISB35000 | 0.5 MICRON HCMOS ARRAYS | SGS-Thomson-Microelectronics | - | - | - | - | 345 K |
MB3505 | 35 mA single-phase silicon bridge rectifier | distributor | - | 4 | -55°C | 150°C | 560 K |
MB3505 | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward rectified output current 35A at Tc=55degC. | distributor | - | 4 | -55°C | 175°C | 27 K |
MB3505W | 35 mA single-phase silicon bridge rectifier | distributor | - | 4 | -55°C | 150°C | 423 K |
RX1214B350Y | NPN microwave power transistor | Philips-Semiconductors | SOT439 | - | - | - | 91 K |
SB350 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 42 K |
SB350 | 3.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 40 K |
SB350 | Medium Current Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 47 K |
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