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bC238

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BC238 NPN Epitaxial Silicon TransistorFairchild-Semiconductor-3--70 K
BC238NPN transistor for general purpose applications and low noise amplifier applicationsKorea-Electronics-Co--Ltd--3-55°C150°C140 K
BC238NPN silicon planar epitaxial transistordistributor-3-55°C150°C228 K
BC238Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.distributor-30°C150°C48 K
BC238BNPN silicon amplifier transistorMotorola-3-55°C150°C112 K
BC238CNPN silicon amplifier transistorMotorola-3-55°C150°C112 K
BC238CAmplifier Transistor NPNON-Semiconductor-3--83 K
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