| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC239 | NPN Epitaxial Silicon Transistor [Obsolete] | Fairchild-Semiconductor | - | 3 | - | - | 70 K |
| BC239 | NPN transistor for general purpose applications and low noise amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 140 K |
| BC239 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 228 K |
| BC239 | NPN silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 112 K |
| BC239 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. | distributor | - | 3 | 0°C | 150°C | 49 K |
| BC239C | NPN silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 112 K |
| BC239C | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 83 K |
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