Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BD242C | 100 V, complementary PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 139 K |
BD242C | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 27 K |
BD242C | 3Ampere complementary silicon plastic power transistor | distributor | - | 3 | -65°C | 150°C | 133 K |
BD242C | PNP complementary silicon plastic power transistor | Motorola | - | 4 | -65°C | 150°C | 139 K |
BD242C | Complementary Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 108 K |
BD242C | General purpose PNP transistor | Power-Innovations | - | - | - | - | 87 K |
BD242C | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
BD242C | 115 V, PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 476 K |
BD242C | 115 V, PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 476 K |
BD242C | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
1 |
---|