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bd242c

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BD242C100 V, complementary PNP silicon power transistordistributor-3-65°C150°C139 K
BD242CPNP Epitaxial Silicon TransistorFairchild-Semiconductor----27 K
BD242C3Ampere complementary silicon plastic power transistordistributor-3-65°C150°C133 K
BD242CPNP complementary silicon plastic power transistorMotorola-4-65°C150°C139 K
BD242CComplementary Silicon Power TransistorsON-Semiconductor-3--108 K
BD242CGeneral purpose PNP transistorPower-Innovations----87 K
BD242CCOMPLEMENTARY SILICON POWER TRANSISTORSSGS-Thomson-Microelectronics----66 K
BD242C115 V, PNP silicon power transistordistributor-3-65°C150°C476 K
BD242C115 V, PNP silicon power transistordistributor-3-65°C150°C476 K
BD242CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.distributor-3-65°C150°C47 K
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