Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F1008 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
UF1008 | Ultrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -50°C | 150°C | 60 K |
UF1008 | Reverse voltage: 800.00V; 10A ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1008 | Reverse voltage: 800.00V; 10A ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1008CT | Reverse voltage: 50.00V; 10A ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 48 K |
UF1008F | Ultrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -50°C | 150°C | 59 K |
UF1008F | Reverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1008F | Reverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1008FCT | Reverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
UF1008FCT | Reverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
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