| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1012 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 33 K |
| BF1012S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 43 K |
| BF1012W | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 359 K |
| F1012 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| MRF10120 | 120 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 128 K |
| MRF10120 | Microwave long pulse power transistor | Motorola | - | 3 | - | - | 98 K |
| PTF10120 | 120 watts, 1.8-2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 5 | - | - | 420 K |
| PTF10122 | 50 watts, 2.1-2.2 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 3 | - | - | 263 K |
| PTF10125 | 135 watts, 1.4-1.6 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 5 | - | - | 291 K |
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