| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1016 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| PTF10160 | 85 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 3 | - | - | 253 K |
| PTF10161 | 165 watts, 869-894 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 3 | - | - | 288 K |
| PTF10162 | 18 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 3 | - | - | 341 K |
| SN74F1016DW | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas-Instruments | DW | 20 | 0°C | 70°C | 84 K |
| SN74F1016DW | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas-Instruments | DW | 20 | 0°C | 70°C | 84 K |
| SN74F1016DWR | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas-Instruments | DW | 20 | 0°C | 70°C | 84 K |
| SN74F1016DWR | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas-Instruments | DW | 20 | 0°C | 70°C | 84 K |
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