| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1018 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 38 K |
| IRF1018EPBF | 60V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 430 K |
| IRF1018ESLPBF
| 60V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 430 K |
| IRF1018ESPBF | 60V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 430 K |
| IRF1018ESTRLPBF
| 60V Single N-Channel HEXFET Power MOSFET | International-Rectifier | - | | - | - | 430 K |
| MF1018S-1 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 146 K |
| MF1018S-2 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 144 K |
| MF1018S-3 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 161 K |
| MF1018S-4 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 137 K |
| MF1018V-4 | Filter for the transmitting RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 74 K |
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