| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1220 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| QRF1220T30 | 1200V, 200A fast recovery common anode diode | distributor | - | - | - | - | 112 K |
| TSDF1220 | 12-GHz low-noise RF transistor | Vishay-Telefunken | SOT143 | - | - | - | 81 K |
| TSDF1220R | 12-GHz low-noise RF transistor | Vishay-Telefunken | SOT143R | - | - | - | 81 K |
| TSDF1220RW | 12-GHz low-noise RF transistor | Vishay-Telefunken | SOT343R | - | - | - | 81 K |
| TSDF1220W | 12-GHz low-noise RF transistor | Vishay-Telefunken | SOT343 | - | - | - | 81 K |
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