| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BFX85 | 100 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 56 K |
| FX851 | P-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2119 | 6 | - | - | 139 K |
| FX852 | N-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2119 | 6 | - | - | 135 K |
| FX854 | P-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2119 | 6 | - | - | 135 K |
| FX855 | N-channel silicon MOSFET + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2119 | 6 | - | - | 135 K |
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