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g4bc10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C158 K
IRG4BC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C210 K
IRG4BC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C157 K
IRG4BC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C210 K
IRG4BC10SD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C217 K
IRG4BC10SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-RectifierDDPak3-55°C150°C217 K
IRG4BC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.International-Rectifier-3-55°C150°C184 K
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