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g4psc7

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PSC71KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60AInternational-Rectifier-3-55°C150°C152 K
IRG4PSC71KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60AInternational-Rectifier-3-55°C150°C196 K
IRG4PSC71UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60AInternational-Rectifier-3-55°C150°C151 K
IRG4PSC71UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60AInternational-Rectifier-3-55°C150°C253 K
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