| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL22V10B-10LJ | High Performance E2CMOS PLD, 10ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-10LP | High Performance E2CMOS PLD, 10ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-15LJ | High Performance E2CMOS PLD, 15ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-15LP | High Performance E2CMOS PLD, 15ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-15QJ | High Performance E2CMOS PLD, 15ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-15QP | High Performance E2CMOS PLD, 15ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-25QJ | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-25QP | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10B-7LJ | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-7LP | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
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