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iRG4PH50KD

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PH50KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24AInternational-Rectifier-3-55°C150°C224 K
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