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irf581

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5810HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5VInternational-RectifierTSOP6-55°C150°C208 K
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