| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF730 | 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 54 K |
| IRF730 | 400 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 59 K |
| IRF730 | N-CHANNEL 400V - 0.75 OHM - 5.5A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 94 K |
| IRF7301 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.050 Ohm. | International-Rectifier | SO | 8 | -55°C | 150°C | 113 K |
| IRF7303 | Power MOSFET for fast switching applications, 30V, 4.9A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
| IRF730B | 400V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 898 K |
| IRF730B | 400V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 898 K |
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