Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF7470 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10A | International-Rectifier | SO | 8 | -55°C | 150°C | 119 K |
IRF7471 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10A | International-Rectifier | SO | 8 | -55°C | 150°C | 214 K |
IRF7473 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9A | International-Rectifier | SO | 8 | -55°C | 150°C | 196 K |
IRF7476 | Power MOSFET for high frequency applications, 12V, 15A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
IRF7478 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V. | International-Rectifier | SO | 8 | -55°C | 150°C | 209 K |
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