| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF820 | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 54 K |
| IRF820 | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRF820 | N-channel enhancement mode power MOS transistor, 500V, 3.0A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF820 | N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
| IRF820A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 100 K |
| IRF820AL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 133 K |
| IRF820AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 133 K |
| IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRF820S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
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