| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF840 | 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 56 K |
| IRF840 | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
| IRF840 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
| IRF840 | N-CHANNEL 500V - 0.75 OHM - 8A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
| IRF840A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 89 K |
| IRF840AL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 129 K |
| IRF840AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 129 K |
| IRF840LCL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRF840LCS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 173 K |
| IRF840S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
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