| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFBC30 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFBC30 | N-CHANNEL 600V - 1.8 OHM - 3.6A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| IRFBC30A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 101 K |
| IRFBC30AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 147 K |
| IRFBC30L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRFBC30S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 362 K |
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