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mjE13005

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HMJE13005Emitter to base voltage:9V; 4A NPN epitaxial planar transistordistributor-3--41 K
MJE13005400V switchmode series NPN power transistordistributor-3-65°C150°C180 K
MJE13005NPN silicon power transistorMotorola-3-65°C150°C311 K
MJE13005SWITCHMODE Series NPN Silicon Power TransistorsON-Semiconductor-3--311 K
MJE13005Switchmode power transistor. High voltage, high speed power switching inductive circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Vebo = 9Vdc.distributor-3-65°C150°C51 K
MJE13005NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4Adc, Pd = 75W.distributor-3-65°C150°C46 K
MJE13005NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductorsTO220AB3--36 K
MJE13005BNPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductorsTO220AB3--67 K
MJE13005FNPN transistor for switching regulator applications, high voltage switching applications, high speed DC-DC converter applications and fluorescent light ballastor applicationsKorea-Electronics-Co--Ltd--3-55°C150°C352 K
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