Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
MJD122 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
MJD122 | Complementary darlington power transistor | Motorola | - | 4 | -65°C | 150°C | 284 K |
MJD122 | Complementary Darlington Power Transistors | ON-Semiconductor | DPAK | 3 | - | - | 284 K |
MJD122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 81 K |
MJD122-1 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
MJD122-1 | NPN darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
MJD122T4 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
MJD122T4 | Complementary Darlington Power Transistors | ON-Semiconductor | DPAK | 3 | - | - | 284 K |
MJD122T4 | NPN transistor for high DC current gain, 100V, 8A | ON-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
MJD122T4 | NPN darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
1 [2] |
---|