| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQNL1N50B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 620 K |
| FQNL2N50B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 598 K |
| FQU1N50B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 606 K |
| FQU2N50B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 597 K |
| IXGH24N50B | 500V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 67 K |
| R1112N50B-TL | Low noise 150mA LDO regulator. Output voltage 5.0V. Active high type. Taping type TL | distributor | - | 5 | -40°C | 85°C | 244 K |
| R1112N50B-TR | Low noise 150mA LDO regulator. Output voltage 5.0V. Active high type. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 244 K |
| RFV10N50BE | 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs | Intersil-Corporation | - | - | - | - | 66 K |
| SSI1N50B | 520V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 600 K |
| SSP1N50B | 520V, 1.5A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 629 K |
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