Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
NTE3300 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE3301 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE3302 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE3303 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
NTE331 | Silicon complementary NPN transistor. Audio power amp, switch. | distributor | TO220 | 3 | 0°C | 150°C | 21 K |
NTE3310 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 18 K |
NTE3311 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 18 K |
NTE3312 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 18 K |
NTE332 | Silicon complementary PNP transistor. Audio power amp, switch. | distributor | TO220 | 3 | 0°C | 150°C | 21 K |
NTE3320 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | - | 3 | 0°C | 150°C | 20 K |
1 [2] |
---|