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p4n50

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQP4N50500V N-Channel MOSFETFairchild-Semiconductor----733 K
FQP4N50500V N-Channel MOSFETFairchild-Semiconductor----733 K
MTP4N50ETMOS E-FET high energy power FETMotorola-4-55°C150°C254 K
PHP4N50E500 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C21 K
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