| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STP4NA100 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| STP4NA40 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 198 K |
| STP4NA40FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 198 K |
| STP4NA60 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 203 K |
| STP4NA60FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 203 K |
| STP4NA60FP | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STP4NA80 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP4NA80FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP4NA90 | Power dissipation 100 W Transistor polarity N Channel Current Id cont. 3.5 A Current Idm pulse 14 A Voltage Vgs th max. 3.75 V Voltage Vds max 900 V Resistance Rds on 4 R Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 236 K |
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