| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STP5NA50 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP5NA50FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP5NA60 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
| STP5NA80 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 206 K |
| STP5NA80FP | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STP5NA90 | Power dissipation 125 W Transistor polarity N Channel Current Id cont. 5 A Current Idm pulse 20 A Voltage Vgs th max. 3.75 V Voltage Vds max 900 V Resistance Rds on 2.5 R Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 359 K |
| STP5NA90FI | Power dissipation 60 W Transistor polarity N Channel Current Id cont. 3.5 A Voltage Vgs th max. 2 kV Voltage Vds max 900 V Resistance Rds on 2.5 R Temperature current 25 ?C Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 359 K |
| STP5NA90FI | Power dissipation 60 W Transistor polarity N Channel Current Id cont. 3.5 A Voltage Vgs th max. 2 kV Voltage Vds max 900 V Resistance Rds on 2.5 R Temperature current 25 ?C Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 359 K |
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