| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP6N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 536 K |
| MTP6N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 153 K |
| MTP6N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 156 K |
| PHP6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| PHP6N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 75 K |
| PHP6N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 75 K |
| SGP6N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 510 K |
| SGP6N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 570 K |
| STP6N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 151 K |
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