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phb4n40

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
PHB4N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C78 K
PHB4N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C78 K
PHB4N40EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4043-55°C150°C78 K
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