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phb4n60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
PHB4N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C80 K
PHB4N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4043-55°C150°C80 K
PHB4N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4043-55°C150°C80 K
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