Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF510 | N-channel power MOSFET, 100V, 5.6A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
IRF510 | 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 70 K |
IRF510 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | International-Rectifier | - | 3 | -55°C | 175°C | 175 K |
IRF510A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 252 K |
IRF510S | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | International-Rectifier | - | 3 | -55°C | 175°C | 178 K |
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