| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
| IRF5305 | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 175°C | 124 K |
| IRF5305L | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 175°C | 171 K |
| IRF5305S | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 171 K |
| IRF530FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
| IRF530FP | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| IRF530N | 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 125 K |
| IRF530N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A | International-Rectifier | - | 3 | -55°C | 175°C | 212 K |
| IRF530N | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 97 K |
| IRF530NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 178 K |
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