Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416RD8AC-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
KM416RD8AD-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
RN5RG60AA-TL | Voltage regulator with external power transistor. Output voltage 6.0V. Taping type TL | distributor | - | 5 | -40°C | 85°C | 125 K |
RN5RG60AA-TR | Voltage regulator with external power transistor. Output voltage 6.0V. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 125 K |
RN5RG60AC | Voltage regulator with external power transistor. Output voltage 6.0V. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 125 K |
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