| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB39S64160AT-10 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160AT-8 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160AT-8B | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160ATL-10 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160ATL-8 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160ATL-8B | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| K4S641632D-TC/L55 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 183 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L60 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 166 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L70 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 143 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
| K4S641632D-TC/L75 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 115 K |
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