| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD612 | NPN epitaxial planar silicon transistor, 25V/2A low frequency power amp application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 238 K |
| 2SD612K | NPN epitaxial planar silicon transistor, 35V/2A low frequency power amp application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 238 K |
| 2SD613 | 6Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 132 K |
| 2SD613 | NPN epitaxial planar silicon transistor, 85V/6A, AF 25 to 35W output application | SANYO-Electric-Co--Ltd- | 2010C | 3 | - | - | 91 K |
| 2SD613 | NPN epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| MSD6100 | Dual switching diode common cathode | Motorola | - | 3 | -55°C | 135°C | 64 K |
| MSD6100 | Dual Switching Diode Common Cathode | ON-Semiconductor | - | 3 | - | - | 64 K |
| MSD6100RLRA | Dual Switching Diode Common Cathode | ON-Semiconductor | - | 3 | - | - | 64 K |
| MSD6150 | Dual diode common anode | Motorola | - | 3 | -55°C | 135°C | 64 K |
| MSD6150 | Dual Switching Diode Common Anode | ON-Semiconductor | - | 3 | - | - | 64 K |
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