| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASI1001 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI1002 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI1005 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI1010 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ASI1020 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| ISPLSI1032-60LG/883 | 60 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | CPGA | 84 | -55°C | 125°C | 151 K |
| ISPLSI1048C-50LG/883 | 50 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | CPGA | 133 | -55°C | 125°C | 185 K |
| ISPLSI1048EA-125LT128 | 125 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | TQFP | 128 | 0°C | 70°C | 182 K |
| ISPLSI1048EA-170LQ128 | 170 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | PQFP | 128 | 0°C | 70°C | 182 K |
| ISPLSI1048EA-170LT128 | 170 MHz in-system prommable high density PLD | Lattice-Semiconductor-Corporation | TQFP | 128 | 0°C | 70°C | 182 K |
| 1 [2] [3] [4] [5] [6] |
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