| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSL230D | 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| FSL230R | 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| FSL234R | 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| FSL23A0D | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| FSL23A0R | 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| FSL23A4D | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| FSL23A4R | 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| IRFSL23N15D | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A | International-Rectifier | - | 3 | -55°C | 175°C | 139 K |
| IRFSL23N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A | International-Rectifier | - | 3 | -55°C | 175°C | 196 K |
| SL23-T1 | Reverse voltage: 30.00V; 2.0A low VF surface mount schottky barrier rectifier | distributor | SMB | 2 | -65°C | 125°C | 40 K |
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