| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF9Z24N | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A | International-Rectifier | - | 3 | -55°C | 175°C | 109 K |
| IRF9Z24NL | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A | International-Rectifier | - | 3 | -55°C | 175°C | 168 K |
| IRF9Z24NS | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 168 K |
| IRFZ24N | Power MOSFET, 55V, 17A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRFZ24N | N-channel enhancement mode TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 64 K |
| IRFZ24NL | Power MOSFET, 55V, 17A | International-Rectifier | - | 3 | -55°C | 175°C | 159 K |
| IRFZ24NS | Power MOSFET, 55V, 17A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 159 K |
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