| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HM62256ALP-10SL | 32,768-word x 8-bit high speed CMOS static RAM, 100ns | distributor | DIP | 28 | 0°C | 70°C | 71 K |
| HM62256ALSP-10SL | 32,768-word x 8-bit high speed CMOS static RAM, 100ns | distributor | DIP | 28 | 0°C | 70°C | 71 K |
| HY57V658020BLTC-10S | 4Mbit x 2 bank x 8 SDRAM, LVTTL, low power, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 146 K |
| HY57V658020BTC-10S | 4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 146 K |
| HY57V658020BTC-10SI | 4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz | distributor | TSOP II | 54 | -40°C | 85°C | 138 K |
| SMJ4C1024-10SV | 1048576 by 1-bit dynamic random-access memory, 100ns | Texas-Instruments | CZIP | 20 | -55°C | 125°C | 414 K |
| SMJ4C1024-10SV | 1048576 by 1-bit dynamic random-access memory, 100ns | Texas-Instruments | CZIP | 20 | -55°C | 125°C | 414 K |
| SMJ4C1024-10SV | 1048576 by 1-bit dynamic random-access memory, 100ns | Texas-Instruments | CZIP | 20 | -55°C | 125°C | 414 K |
| TMS4256-10SDE | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | -40°C | 85°C | 1 M |
| TMS4257-10SDL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | 0°C | 70°C | 1 M |
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