| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT25F1024N-10SI-2.7 | 1M (131,072 x 8) SPI serial memory, 2.7V | ATMEL-Corporation | SOIC | 8 | -40°C | 85°C | 151 K |
| AT25F512N-10SI-2.7 | 512K (65,536 x 8) SPI serial memory, 2.7V | ATMEL-Corporation | SOIC | 8 | -40°C | 85°C | 151 K |
| AT93C56W-10SC-2.7 | 3-wire serial EEPROM, 1000KHz, 2.7V to 5.5V | ATMEL-Corporation | SOIC | 8 | 0°C | 70°C | 243 K |
| AT93C66-10SI | 3-wire serial EEPROM, 10ms, 4.5V to 5.5V | ATMEL-Corporation | SOIC | 8 | -40°C | 85°C | 243 K |
| AT93C66W-10SI | 3-wire serial EEPROM, 10ms, 4.5V to 5.5V | ATMEL-Corporation | SOIC | 8 | -40°C | 85°C | 243 K |
| TMS4256-10SDL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | 0°C | 70°C | 1 M |
| TMS4256-10SDL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | 0°C | 70°C | 1 M |
| TMS4256-10SDS | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | -55°C | 100°C | 1 M |
| TMS4256-10SDS | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | -55°C | 100°C | 1 M |
| TMS4257-10SDS | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | SD | 16 | -55°C | 100°C | 1 M |
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