| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM100TF-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 56 K |
| CM10MD-12H | 10A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 158 K |
| CM150TF-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 53 K |
| CM15MD-12H | 15A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 166 K |
| CM20MD-12H | 20A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 187 K |
| CM20TF-12H | 20 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 50 K |
| CM30TF-12H | 30 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 53 K |
| CM50TF-12H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 49 K |
| CM75TF-12H | 75 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 56 K |
| RM50HG-12S | 50 Amp fast recovery diode module for high switching use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 25 K |
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