Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
CM10MD1-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 144 K |
CM10MD3-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 377 K |
CM15MD1-12H | 15A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 155 K |
CM15MD3-12H | 15A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 164 K |
CM20MD1-12H | 20A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 153 K |
CM20MD3-12H | 20A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 139 K |
CM30MD-12H | 30A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 143 K |
CM30MD1-12H | 30A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 129 K |
CM50MD-12H | 50A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 149 K |
CM50MD1-12H | 50A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 127 K |
<< [349] [350] [351] [352] [353] 354 [355] [356] [357] [358] [359] >> |
---|