| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM150TU-12F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| CM150TU-12F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| CM200TU-12F | 200A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 82 K |
| CM300DU-12F | 300A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 74 K |
| CM30MD3-12H | 30A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 135 K |
| CM400DU-12F | 400A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 73 K |
| CM600HU-12F | 600A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 150°C | 53 K |
| CM75TU-12F | 75A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| FD2000DU-120 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 48 K |
| FG6000AU-120D | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 59 K |
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