Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FU-630SLD-12M1 | 1.48m pump LD module with singlemode fiber (EDFA) | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -20°C | 65°C | 60 K |
M5M51016BTRRT-12VL | 1048576-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | 0°C | 70°C | 75 K |
M5M51016BTRRT-12VL-I | 1048576-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | 0°C | 70°C | 75 K |
M5M51016BTRRT-12VLL | 1048576-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | 0°C | 70°C | 75 K |
M5M51016BTRRT-12VLL-I | 1048576-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | 0°C | 70°C | 75 K |
M5M51016RT-12VL-I | 1048576-bit (65536-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | 0°C | 70°C | 75 K |
RM50HG-12S | 50A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
SGA-1263 | DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block | distributor | - | 6 | -40°C | 85°C | 329 K |
SPA-1218 | 1960 MHz 1 watt power amplifier with active bias. | distributor | SOIC | 8 | -40°C | 85°C | 208 K |
SSW-124 | DC - 6 GHz high isolation (42dB at 2GHz, 30dB at 6GHz) GaAs MMIC SPDT switch. | distributor | - | 8 | -45°C | 85°C | 164 K |
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